• Menü menu
  • menu Menü öffnen
Publikationen
Materials

Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors.

Autor*innen:
Zojer, Karin; Rothländer, Thomas; Kraxner, Johanna; Schmied, Roland; Palfinger, Ursula; Plank, Harald; Grogger, Werner; Haase, Anja; Gold, Herbert; Stadlober, Barbara
Abstract:
Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. Techniques aiming at eliminating parasitic capacitances are prone to produce a mismatch between electrodes, in particular gaps between the gate and the interlayer electrodes. While such mismatches are typically undesirable, we demonstrate that, in fact, device structures with a small single-sided interlayer electrode gap directly probe the detrimental contact resistance arising from the presence of an injection barrier. By employing a self-alignment nanoimprint lithography technique, asymmetric coplanar organic transistors with an intentional gap of varying size (< 0.2 μm) between gate and one interlayer electrode are fabricated. An electrode overlap exceeding 1 μm with the other interlayer has been kept. Gaps, be them source or drain-sided, do not preclude transistor operation. The operation of the device with a source-gate gap reveals a current reduction up to two orders of magnitude compared to a source-sided overlap. Drift-diffusion based simulations reveal that this marked reduction is a consequence of a weakened gate-induced field at the contact which strongly inhibits injection.
Originalsprache:
eng
Titel:
Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors.
Seiten:
31387
Publikationsdatum
2016-09

Publikationsreihe

Nummer
6
Proceedings
Scientific reports
Weitere Dateien und links
Jahr/Monat:
2016

Ähnliche Publikationen

Skip to content